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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA649 DESCRIPTION *With TO-3 package *Wide area of safe operation APPLICATIONS *For low frequency and large power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -6 -7 -11 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SA649 SYMBOL MAX UNIT V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Collector-emitter breakdown voltage IC=-25mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-150V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-5V IC=-1A ; VCE=-5V -150 V Collector-base breakdown voltage -150 V Emitter-base breakdown voltage -6 V Collector-emitter saturation voltage -2.0 V Base-emitter saturation voltage -2.5 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 30 120 Transition frequency 10 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA649 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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